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T-carrier is a dedicated, digital, leased-line service offering that employs TDM in order to derive multiple channels from a single four-wire circuit operating in FDX transmission mode. In capsule, T-carrier offers the advantages of digital error performance, increased bandwidth, and improved bandwidth utilization. As is the case with digital services, in general, T-carrier also delivers increased management and control capabilities to the carriers and end users alike. Additionally, T-carrier is medium independent. In other words, it can be provisioned over any of the transmission media (i.e., twisted pair, coax, microwave, satellite, free space optics, or ber-optic cable), at least at transmission rates of T1 (1.544 Mbps) and below. At the higher rate of T3 (44.736 Mbps), twisted pair is not a suitable transmission medium, except over very short distances, due to issues of signal attenuation. As is the case with any dedicated service offering, T-carrier cost is sensitive to distance and bandwidth. While T-carrier initially was deployed in support of voice transmission, it supports data, image, and video as well. Further, T-carrier supports any and all such information streams on an unbiased basis. In other words, all bits and bytes are afforded the same level of treatment, which is the uncompromising level of performance demanded by uncompressed voice. As a result, T-carrier offers the advantage of supporting integrated communications across all information types, whether or not they expect that same high level of treatment. As noted in

An approach envisioned in the U.S.A. in the early days of cellular telephony was to assign the available spectrum to exactly two providers, thus striking a compromise between political requirement (avoiding a monopoly) and technical expediency.

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83 Kapur, V K; Basol, B M; Tseng, E S 1987 Low cost methods for the production of semiconductor lms for CuInSe2/CdS solar cells Solar Cells 21:65 72 84 Oliveira, M C F; Azevedo, M; Cunha, A 2002 A voltammetric study of the electrodeposition of CuInSe2 in a citrate electrolyte Thin Solid Films 405: 129 134 85 Kemell, M; Saloniemi, H; Ritala, M; Leskela, M 2001 Electrochemical quartz crystal microbalance study of the electrodeposition mechanisms of CuInSe2 thin lms J Electrochem Soc 148:C110 C118 86 Guillen, C; Martinez, M A; Herrero, J 2000 CuInSe2 thin lms obtained by a novel electrodeposition and sputtering combined method Vacuum 58:594 601 87 De Silva, K T L; Priyantha, W A A; Jayanetti, J K D S; Chithrani, B D; Siripala, W; Blake, K; Dharmadasa, I M 2001.

When you are finished editing the block, and you need to leave Edit mode, you can use the Rebuild button to do so.

If you re used to using if-then-else statements in other programming languages, this format may be somewhat confusing. In other programming languages, the object after the

Electrodeposition and characterisation of CuInSe2 for applications in thin lm solar cells Thin Solid Films 382:158 163 88 Wenyi, L; Jian, Y; Xuebin, Y; Qiulong, C; Xun, C 2000 Preparation of CuInSe2 lm with electrodeposition Proceedings of the SPIE The International Society for Optical Engineering, Vol 4086 pp 217 220 89 Kampmann, A; Sittinger, V; Rechid, J; Reineke-Koch, R 2000 Large area electrodeposition of Cu(In,Ga)Se2 Thin Solid Films 361 362:309 313 90 Bhattacharya, R N; Rajeshwar, K 1986 Electrodeposition of CuInX (X = Se, Te) thin lms Solar Cells 16:237 243 91 Friedfeld, R; Raffaelle, R P; Mantovani, J G 1999 Electrodeposition of CuInxGa1-xSe2 thin lms Solar Energy Mater Solar Cells 58:375 385 92 Mehlin, M; Rammasch, J; Fritz, H P 1994 Preparation of CuGaSe2 thin- lm solar-cells comprising an electrochemical gallium deposition step Zeitschrift Fur.

5. Click the Exit Edit Part icon in the ConfirmationCorner, the upper-right corner of the SolidWorks graphics window. Right-click on the new part in the FeatureManager and select Rename Part. Rename it Plate4. You can also use the Windows standard method of slow double-clicking to rename parts. The ^ 16 tutorial layout start part of the name is automatically added. Assign a material from the Appearances tab for the new plate.

Naturforschung 49b:1597 1605 93 Ugarte, R; Schrebler, R; Cordova, R; Dalchiele, E A; Gomez, H 1999 Electrodeposition of CuInSe2 thin lms in a glycine acid medium Thin Solid Films 340:117 124 94 Bhattacharya, R N; Batchelor, W; Ramanathan, K; Contreras, M A; Moriarty, T 2000 The performance of CuIn1-xGaxSe2-based photovoltaic cells prepared from low-cost precursor lms Solar Energy Mater Solar Cells 63:367 374 95 Bhattacharya, R N; Balcioglu, A; Ramanathan, K 2001 Deep-level transient spectroscopy (DLTS) of CdS/CuIn1-xGaxSe2-based solar cells prepared from electroplated and auto-plated precursors, and by physical vapor deposition Thin Solid Films 384:65 68 96 Lang, D V 1974 Deep-level transient spectroscopy: A new method to characterize traps in semiconductors J Appl Phys 45:3023 3032 97 Abou-Elfotouh, F A; Moutinho, H; Bakry, A; Coutts, T J; Kazmerski, L L 1991.

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